vs-8ETL06PBF, vs-8etl06-n3, vs -8etl06fppbf, vs-8etl06fp-n3 www.vishay.com vishay semiconductors revision: 02-jan-12 1 document number: 94028 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ultralow v f hyperfast rectifier for discontinuous mode pfc, 8 a fred pt ? features ? hyperfast recovery time ? benchmark ultralow forward voltage drop ? 175 c operating junction temperature ? low leakage current ? fully isolated package (v ins = 2500 v rms ) ? ul e78996 pending ? compliant to rohs directive 2002/95/ec ? designed and qualified according to jedec-jesd47 ? halogen-free according to iec 61249-2-21 definition (-n3 only) description state of the art, ultralow v f , soft-switching hyperfast rectifiers optimized for discon tinuous (critical) mode (dcm) power factor correction (pfc). the minimized conduction lo ss, optimized stored charge and low recovery current mini mize the switching losses and reduce over dissipation in the switching element and snubbers. the device is also intended for use as a freewheeling diode in power supplies and other po wer switching applications. applications ac/dc smps 70 w to 400 w e.g. laptop and printer ac adaptors, desktop pc, tv and monitor, games units and dvd ac/dc power supplies. product summary package to-220ac, to-220fp i f(av) 8 a v r 600 v v f at i f 1.05 v t rr typ. 60 ns t j max. 175 c diode variation single die to-220ac to-220 full-pa k anode 1 3 cathode base cathode 2 anode 1 3 cathode vs-8ETL06PBF vs-8etl06fppbf vs-8etl06-n3 vs-8etl06fp-n3 absolute maximum ratings parameter symbol test conditions values units repetitive peak reverse voltage v rrm 600 v average rectified forward current i f(av) t c = 160 c 8 a full-pak t c = 142 c non-repetitive peak surge current i fsm t j = 25 c 175 repetitive peak forward current i fm 16 operating junction and storage temperatures t j , t stg - 65 to 175 c electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test condit ions min. typ. max. units breakdown voltage, blocking voltage v br , v r i r = 100 a 600 - - v forward voltage v f i f = 8 a - 0.96 1.05 i f = 8 a, t j = 150 c - 0.81 0.86 reverse leakage current i r v r = v r rated - 0.05 5 a t j = 150 c, v r = v r rated - 20 100 junction capacitance c t v r = 600 v - 17 - pf series inductance l s measured lead to lead 5 mm from package body - 8.0 - nh
vs-8ETL06PBF, vs-8etl06-n3, vs -8etl06fppbf, vs-8etl06fp-n3 www.vishay.com vishay semiconductors revision: 02-jan-12 2 document number: 94028 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - typical forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage dynamic recovery characteristics (t c = 25 c unless otherwise specified) parameter symbol test condition s min. typ. max. units reverse recovery time t rr i f = 1 a, di f /dt = 100 a/s, v r = 30 v - 60 100 ns i f = 8 a, di f /dt = 100 a/s, v r = 30 v - 150 250 t j = 25 c i f = 8 a di f /dt = 200 a/s v r = 390 v - 170 - t j = 125 c - 250 - peak recovery current i rrm t j = 25 c - 15 - a t j = 125 c - 20 - reverse recovery charge q rr t j = 25 c - 1.3 - c t j = 125 c - 2.6 - thermal - mechanical specifications parameter symbol test condit ions min. typ. max. units maximum junction and storage temperature range t j , t stg - 65 - 175 c thermal resistance, junction to case r thjc -1.42 c/w (full-pak) - 3.4 4.3 thermal resistance, junction to ambient per leg r thja typical socket mount - - 70 thermal resistance, case to heatsink r thcs mounting surface, flat, smooth and greased -0.5- weight -2.0- g -0.07- oz. mounting torque 6.0 (5.0) - 12 (10) kgf cm (lbf in) marking device case style to-220ac 8etl06 case style to- 220 full-pak 8etl06fp 1 10 t j = 175 c t j = 150 c t j = 25 c 0.4 0.8 v f - forward voltage drop (v) i f - instantaneous forward current (a) 100 1.2 1.6 2.0 0.1 0.01 0.1 1 10 100 100 200 400 v r - reverse voltage (v) i r - reverse current (a) 300 0.001 600 500 t j = 175 c t j = 150 c t j = 125 c t j = 100 c t j = 25 c t j = 50 c t j = 75 c
vs-8ETL06PBF, vs-8etl06-n3, vs -8etl06fppbf, vs-8etl06fp-n3 www.vishay.com vishay semiconductors revision: 02-jan-12 3 document number: 94028 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - typical junction ca pacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics fig. 5 - maximum thermal impedance z thjc characteristics (full-pak) 100 0 200 400 500 600 10 v r - reverse voltage (v) c t - junction capacitance (pf) 300 100 t j = 25 c 0.01 0.1 10 0.00001 0.0001 0.001 0.01 0.1 1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) . . p dm t 1 t 2 notes: 1. duty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c 1 single pulse (thermal resistance) d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 0.01 0.1 10 0.00001 0.0001 0.001 0.01 0.1 1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) . . p dm t 1 t 2 notes: 1. duty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c 1 single pulse (thermal resistance) 10 100 d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01
vs-8ETL06PBF, vs-8etl06-n3, vs -8etl06fppbf, vs-8etl06fp-n3 www.vishay.com vishay semiconductors revision: 02-jan-12 4 document number: 94028 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 6 - maximum allowable case temperature vs. average forward current fig. 7 - maximum allowable case temperature vs. average forward current (full-pak) fig. 8 - forward power loss characteristics fig. 9 - typical reverse recovery time vs. di f /dt fig. 10 - typical stored charge vs. di f /dt note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 8); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = rated v r 02 6 10 14 allowable case temperature (c) i f(av) - average forward current (a) 150 160 48 165 170 175 180 155 square wave (d = 0.50) rated v r applied see note (1) dc 12 02 6 10 14 allowable case temperature (c) i f(av) - average forward current (a) 80 100 48 120 140 160 180 square wave (d = 0.50) rated v r applied see note (1) dc 12 02 6 1012 average power loss (w) i f(av) - average forward current (a) 0 4 d = 0.01 d = 0.02 d = 0.05 d = 0.10 d = 0.20 d = 0.50 dc rms limit 48 8 12 10 6 2 100 1000 t rr (ns) di f /dt (a/s) 450 0 i f = 16 a i f = 8 a v r = 390 v t j = 125 c t j = 25 c 400 300 200 100 50 150 250 350 100 1000 q rr (nc) di f /dt (a/s) 5000 500 i f = 16 a i f = 8 a 3500 2500 1500 1000 v r = 390 v t j = 125 c t j = 25 c 4500 3000 2000 4000
vs-8ETL06PBF, vs-8etl06-n3, vs -8etl06fppbf, vs-8etl06fp-n3 www.vishay.com vishay semiconductors revision: 02-jan-12 5 document number: 94028 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 11 - reverse recovery parameter test circuit fig. 12 - reverse recovery waveform and definitions irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve dened by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
vs-8ETL06PBF, vs-8etl06-n3, vs -8etl06fppbf, vs-8etl06fp-n3 www.vishay.com vishay semiconductors revision: 02-jan-12 6 document number: 94028 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description vs-8ETL06PBF 50 1000 antistatic plastic tube vs-8etl06-n3 50 1000 antistatic plastic tube vs-8etl06fppbf 50 1000 antistatic plastic tube vs-8etl06fp-n3 50 1000 antistatic plastic tube links to related documents dimensions to-220ac www.vishay.com/doc?95221 to-220fp www.vishay.com/doc?95005 part marking information to-220acpbf www.vishay.com/doc?95224 to-220ac-n3 www.vishay.com/doc?95068 to-220fppbf www.vishay.com/doc?95009 to-220fp-n3 www.vishay.com/doc?95440 1 - vishay semiconductors product 2 - current rating (8 = 8 a) 3 - e = single diode 4 - t = to-220, d 2 pak 5 - l = ultralow v f hyperfast recovery 6 - voltage rating (06 = 600 v) 7 - none = to-220ac fp = to-220 full-pak 8 device code 5 1 3 2 4 6 7 8 vs- 8 e t l 06 fp pbf pbf = lead (pb)-free and rohs compliant - environmental digit: -n3 = halogen-free, rohs compliant and totally lead (pb)-free
outline dimensions www.vishay.com vishay semiconductors revision: 20-jul-11 1 document number: 95005 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dimensions in millimeters 5 0.5 3.3 3.1 5 0.5 0.9 0.7 2.54 typ. 2.54 typ. 10.6 10.4 3.7 3.2 7.31 6.91 0.61 0.38 2.85 2.65 2.8 2.6 1.4 1.3 10 4.8 4.6 16.0 15.8 16.4 15.4 (2 places) r 0.7 r 0.5 hole ? 3.4 3.1 typ. 1.15 1.05 13.56 13.05 lead assignments diode s 1 + 2 - cathode 3 - anode conforms to jedec outline to-220 full-pak
document number: 95221 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 07-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 to-220ac outline dimensions vishay semiconductors dimensions in millimeters and inches notes (1) dimensioning and tolerancin g as per asme y14.5m-1994 (2) lead dimension and fini sh uncontrolled in l1 (3) dimension d, d1 and e do not in clude mold flash. mold flash shall not exceed 0.127 mm (0. 005") per side. these dimensions are m easured at the outermost extrem es of the plastic body (4) dimension b1, b3 and c1 apply to base metal only (5) controlling dimension: inches (6) thermal pad contour optional with in dimensions e, h1, d2 and e1 (7) dimension e2 x h1 define a zone where stamping and singulation irregularities are allowed (8) outline conforms to jedec to-220, d2 (minimum) where dimensions are derived from the actual package outline symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.25 4.65 0.167 0.183 e1 6.86 8.89 0.270 0.350 6 a1 1.14 1.40 0.045 0.055 e2 - 0.76 - 0.030 7 a2 2.56 2.92 0.101 0.115 e 2.41 2.67 0.095 0.105 b 0.69 1.01 0.027 0.040 e1 4.88 5.28 0.192 0.208 b1 0.38 0.97 0.015 0.038 4 h1 6.09 6.48 0.240 0.255 6, 7 b2 1.20 1.73 0.047 0.068 l 13.52 14.02 0.532 0.552 b3 1.14 1.73 0.045 0.068 4 l1 3.32 3.82 0.131 0.150 2 c 0.36 0.61 0.014 0.024 l3 1.78 2.13 0.070 0.084 c1 0.36 0.56 0.014 0.022 4 l4 0.76 1.27 0.030 0.050 2 d 14.85 15.25 0.585 0.600 3 ? p 3.54 3.73 0.139 0.147 d1 8.38 9.02 0.330 0.355 q 2.60 3.00 0.102 0.118 d2 11.68 12.88 0.460 0.507 6 ? 90 to 93 90 to 93 e 10.11 10.51 0.398 0.414 3, 6 13 2 d d1 h1 q detail b c a b l e1 lead tip l4 l3 e e2 ? p 0.015 a b mm 0.014 a b mm s eating plane c a2 a1 a a a lead assignments diode s 1 + 2 - cathode 3 - anode conforms to jedec outline to-220ac (6) (6) (7) (6) (7) view a - a e1 (6) d2 (6) h1 thermal pad e detail b d l1 d 123 c c 2 x b2 2 x b
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